The microelectronic industry has reaped significant benefits from MOSFET miniaturization during the last three decades. The ability to fit hundreds of millions of transistors on a single chip has been enabled by the reduction of transistors to diameters below 100 nm. End users and, above all, the semiconductor industry have benefited from the improved functionality and lower cost of a wide range of integrated circuits and systems. (http://userweb.eng.gla.ac.uk/fikru.adamu-lema/Chapter_02.pdf, n.d.). MOSFET is an abbreviation for a metal-oxide-semiconductor field-effect transistor. MOSFETs are typically three-terminal devices having gate, drain, and source connections. A voltage applied to the gate terminal controls current conduction between the drain and the source. MOS transistor channel lengths have been halved every two or three years for the past 20 years, resulting in a virtuous cycle of rising packing density (more complex electronic devices), improving performance (higher clock frequencies), and lowering prices per unit silicon surface.